The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Jan. 14, 1999
Hideaki Kuroda, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
An impurity for adjusting a threshold voltage is ion-implanted using, as masks, a resist for forming P.sup.- -type diffusion layers, a resist for forming N.sup.+ -type diffusion layers and N-type diffusion layers and a resist for forming P.sup.+ -type diffusion layers and N-type diffusion layers. For this reason, a semiconductor device including first to third N-channel transistors and first and second P-channel transistors, all of which respectively have different threshold voltages, can be manufactured without using an additional resist except for the above resists. Therefore, an operating margin at a low voltage can be increased and data retention characteristics can be improved in a memory without causing an increase in cost, an increase in power consumption and the like.