The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Jul. 13, 1998
Applicant:
Inventor:
Tsutomu Satoh, Niigata-ken, JP;
Assignee:
Naoetsu Electronics Company, Niigata-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438690 ; 438918 ; 438923 ; 438977 ;
Abstract
The problem to be solved by the present invention is providing a production method capable of adjusting a dislocation density freely to a required dislocation density level for a discrete structure substrate. According to the present invention, when producing a discrete structure substrate generally said to have a low level dislocation density in which an average dislocation density is 5000 pieces/cm.sup.2, diffusing a wafer after determining its thickness so as to meet required dislocation density level, a wafer thickness is adjusted within a specified range before diffusion is carried out.