The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Dec. 10, 1998
Applicant:
Inventors:
Chih-Chen Cho, Richardson, TX (US);
Kyung-Ho Park, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
438627 ; 438628 ; 438637 ; 438643 ; 438644 ; 438648 ; 438653 ; 438654 ; 438656 ; 438680 ; 438685 ; 427255394 ;
Abstract
A TiN.sub.x layer is formed by disposing a substrate (18) in a chamber (12). A first reactant gas (40) comprising Ti, a second reactant gas (42) and a third reactant gas (44) comprising N are introduced into the chamber (12). By controlling the ratio of the first, second and third reactant gasses (40, 42, 44), TiN.sub.x is deposited onto a surface (28) of the substrate (18), where x is between zero and one.