The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Aug. 18, 1989
Applicant:
Inventor:
Douglas L Peltzer, Cupertino, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438416 ; 438414 ; 438444 ; 438356 ; 438357 ; 438359 ;
Abstract
A thin silicon epitaxial layer, formed on a silicon substrate, is subdivided into electrically isolated pockets by a grid of oxidized regions of epitaxial silicon material which extend through the epitaxial layer to a laterally extending PN junction.
Peltzer, Douglas. (2000). Method of fabricating integrated circuits with oxidized isolation (U.S. Patent No. 6093620). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6093620
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile