The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2000
Filed:
Apr. 09, 1998
Applicant:
Inventor:
Kohei Eguchi, Tokyo, JP;
Assignee:
Nippon Steel Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01G / ;
U.S. Cl.
CPC ...
438-3 ; 438240 ;
Abstract
When a capacitor is formed on a semiconductor substrate, a lower electrode of the capacitor is first formed. After an insulating film is formed on the lower electrode, it is selectively etched until the lower electrode is exposed, and in this way, a hole portion is formed in the insulating film. After a ferroelectric film is formed inside the hole portion and on the insulating film, the ferroelectric film is polished and removed by a chemical-mechanical polishing method in such a manner as to leave the ferroelectric film inside the hole portion. Thereafter, an upper electrode of the capacitor is formed on the ferroelectric film.