The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Apr. 13, 1998
Simon Hamparian, Palisades Park, NJ (US);
Lucent Technologies, Inc., Murray Hill, NJ (US);
Abstract
Temperature compensation of LDMOS devices as are employed in high power amplifiers follows from replacing the voltage source and resistive divider that feed the sensing diode of prior art temperature compensators for transistor amplifiers, with a current source feeding the sensing diode in a manner that is substantially independent of voltage variations which follow from temperature change. Such current variations as result from temperature change, in the circuit of the invention, produce variations in the bias voltage at the gate of the LDMOS power transistor which are many times less than the temperature coefficient of the LDMOS device, in producing virtually error-free temperature compensation.