The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Jun. 13, 1997
Nianxiong Tan, Sollentuna, SE;
Telefonaktiebolaget LM Ericsson, Stockholm, SE;
Abstract
In a digital BiCMOS process the storage capability of MOS transistors and the large transconductance of bipolar transistors can be utilized in such a way, that the speed is primarily determined by the capacitance seen by the MOS transistor (4) and the transconductance of the bipolar transistor (5). The advantages over the prior SI technique in CMOS are higher speed, smaller errors and higher accuracy. The advantages over other techniques in BiCMOS are smaller errors and higher accuracy. The unique feature of the invented technique is the combination of high input impedance of the MOS devices and high transconductance of the bipolar devices, where both devices are only available in BiCMOS process and not in the CMOS process.