The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
May. 09, 1997
Applicant:
Inventors:
Kye-hee Yeom, Kyungki-do, KR;
Duck-hyung Lee, Kyungki-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257401 ; 257412 ; 257915 ;
Abstract
An integrated circuit field effect transistor includes a multilayer gate electrode having a first conductive layer and a second conductive layer on the first conductive layer, wherein the second conductive layer is wider than the first conductive layer. The first conductive layer may be formed of titanium nitride and the second conductive layer may be formed of tungsten, copper and/or titanium silicide. The first conductive layer may be recessed relative to the second conductive layer by wet etching using a solution of hydrogen peroxide or hydrogen peroxide and sulfuric acid.