The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Jul. 10, 1998
Shye-Lin Wu, Hsinchu, TW;
Acer Semiconductor Manufacturing Inc., Hsinchu, TW;
Abstract
The mask ROM cell structure is described as follows: a plurality of first polysilicon gates is formed on the semiconductor substrate, being separated to keep a space. Each of first polysilicon gates comprises first nitride layer/ a n+ polysilicon layer/a first pad oxide layer, and two spacers that formed over the remnant portion of the pad oxide layer, and formed, respectively, on two sidewalls of the first nitride layer 130, and the first n+ polysilicon layer. A plurality of second polysilicon gates is formed on the semiconductor substrate 105. Each of the second polysilicon gates comprises second n+doped polysilicon gate/second pad oxide layer, wherein the pad oxide layer is formed on the semiconductor substrate, and the n+doped polysilicon gate is formed on the second pad oxide layer. The first polysilicon gates separate the second polysilicon gates each.