The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Jun. 24, 1998
Applicant:
Inventor:
Michael Duane, Austin, TX (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257386 ; 257364 ; 257401 ;
Abstract
A semiconductor device and process for manufacture thereof is disclosed in which a gate electrode with reduced overlap capacitance is formed by forming a gate electrode on a surface of a semiconductor and doping edge portions of the gate electrode with a first doping which effectively reduces the conductivity of the edge portions of the gate electrode. The conductivity of the gate electrode may be reduced at the edge portions by doping the edge portions with a dopant which inhibits the doping of the gate electrode or with a dopant which has a different conductivity type than the gate electrode dopant.