The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Jan. 28, 1998
Yoshiaki Arima, Tokyo, JP;
Takenobu Iwao, Tokyo, JP;
Nobuyuki Ikeda, Tokyo, JP;
Shuichi Kato, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A macro cell of field effect transistors includes source-drain areas respectively divided into a contact area and a non-contact area. One source-drain area of two of the source-drain areas located on opposite sides of the effective width portion of a gate electrode has a contact area at an upper portion and a non-contact area at a lower portion while the other source-drain area has the non-contact area at its upper portion and the contact area at its lower portion. The distance between effective width portions of gate electrodes where the non-contact area is located is smaller than the distance between effective width portions of gate electrodes where the contact area is located.