The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Jun. 01, 1998
Applicant:
Inventors:
Assignee:
Sharp Kabushiki Kaisha, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 79 ; 257 76 ; 257 97 ; 257190 ; 257196 ; 257201 ; 257615 ; 257618 ; 257622 ; 257623 ; 372 45 ; 372 46 ;
Abstract
A gallium nitride type compound semiconductor light-emitting device of the present invention includes: a substrate; a buffer layer, formed on the substrate, having a thick region and a thin region in terms of a thickness taking a surface of the substrate as a reference level; and a semiconductor layered structure, formed on the buffer layer, at least including an undoped gallium nitride type compound semiconductor layer, a gallium nitride type compound semiconductor active layer, and a P-type gallium nitride type compound semiconductor cladding layer.
Hata, Toshio. (2000). Gallium nitride type compound semiconductor light-emitting device having (U.S. Patent No. 6091083). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6091083
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile