The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Jun. 08, 1998
Ming-Kwei Lee, Kaohsiung, TW;
National Science Council, Taipei, TW;
Abstract
LPD (Liquid Phase Oxide Deposition) technology is a newly developed approach to deposit SiO.sub.2 on silicon wafers. LPD-SO.sub.2 film was deposited by immersing the wafer in hydrofluosilicic acid (H.sub.2 SiF.sub.6) solution supersaturated with silica gel at low temperature (about 40.degree. C.). LPD-SiO.sub.2, also the deformation of wafers is avoided so the method can be applied to the fabrication of integrated circuits. Moreover, this method has high potential to replace the CVD-SiO.sub.2. However, it is very hard to deposit LPD-SiO.sub.2 on very clean silicon wafer (e.g., without any oxide) because of no nucleation seed. In this study, the LPD-SiO.sub.2 was deposited on silicon wafer with a plasma-enhanced chemical vapor deposition oxide, a thermal oxide, an atmospheric pressure chemical vapor deposition oxide, and a nitric acid pretreatment oxide. The nitric acid pretreatment enhances the LPD-SiO.sub.2 growth rate and reduce the stress in the LPD-SiO.sub.2 film. In addition, it has a smaller dielectric constant and it can reduce the parasitic capacitance in integrated circuits.