The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Jun. 26, 1997
Applicant:
Inventor:
Jae-Kap Kim, Kyoungki-do, KR;
Assignee:
Hyundai Electronics Industries Co. Ltd., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438238 ; 438241 ; 438953 ; 438152 ; 438153 ;
Abstract
Disclosed is a semiconductor device having an enhanced current amount ratio, and a manufacturing method thereof. The semiconductor device includes a first transistor and a second transistor. There is a selective electric current capacity difference between the first transistor and the second transistor, wherein a gate degeneracy of the first transistor is different from a gate degeneracy of the second transistor. Among the first and second transistors, the gate degeneracy of the transistor requiring a small amount of current is higher than the gate degeneracy of the transistor requiring a large amount of current.