The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Oct. 02, 1997
Applicant:
Inventors:
Assignee:
University Technology Corporation, Boulder, CO (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ; C23C / ;
U.S. Cl.
CPC ...
42725515 ; 42725518 ; 42725537 ; 427255393 ; 427255394 ;
Abstract
The present invention provides a method for growing atomic layer thin films on functionalized substrates at room temperature using catalyzed binary reaction sequence chemistry. Specifically, the atomic layer films are grown using two half-reactions. Catalysts are used to activate surface species in both half-reactions thereby enabling both half-reactions to be carried out at room temperature.
Published as:
Klaus, Jason. (2000). Method of growing films on substrates at room temperatures using (U.S. Patent No. 6090442). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6090442
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile