The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2000

Filed:

Mar. 23, 1998
Applicant:
Inventors:

Hiroyuki Baba, Chiba, JP;

Masamichi Abe, Chiba, JP;

Kazuhiro Hanazawa, Chiba, JP;

Naomichi Nakamura, Chiba, JP;

Noriyoshi Yuge, Chiba, JP;

Yasuhiko Sakaguchi, Tokyo, JP;

Yoshiei Kato, Chiba, JP;

Tetsuya Fujii, Chiba, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B / ; C01B / ;
U.S. Cl.
CPC ...
423350 ; 423348 ;
Abstract

Method for producing highly purified silicon for use in solar cells by a single solidification purification, pouring silicon into a mold and gradually fractionally solidifying it while solidifying the liquid surface, followed by purifying the solidified silicon by zone melting or continuous casting using an electromagnetic mold, or by zone melting in combination with continuous casting, and optionally causing directional solidification to concentrate impurities, leaching and recycling.


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