The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2000
Filed:
Apr. 01, 1998
Bobby P Faulkner, New Berlin, WI (US);
John M Paustian, Milwaukee, WI (US);
Svedala Industries, Inc., Waukesha, WI (US);
Abstract
A process for removing impurities contained in the crystal lattice of minerals, comprising the steps of forming a mixture of a mineral capable of structurally reorganizing its crystal lattice which contains an impurity in its crystal lattice and a halogen anion, and water; heating the mixture to the mineral's structural reorganization transition temperature; holding the mixture at the structural reorganization transition temperature for a sufficient period of time to allow the impurity to freely migrate from the lattice to combine with the halogen anion; and separating the combined impurity and anion from the mixture to render the mineral essentially free of the impurity. The process is applicable to numerous minerals and impurities, but is especially useful to remove arsenic from fluorspar. Numerous halogen anions can be employed, such as chlorides, fluorides, bromides and iodides, but the preferred halogen anion is a metal chloride such as calcium chloride. Various matrix-forming additives may also be employed with the mixture to provide a receptor which immobilizes the impurity. Preferred additives are silicates, added in the form of bentonite or other clays.