The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Oct. 06, 1999
Shinichi Kojima, Kanagawa, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
Saturation connection is performed between the gate and source of a depletion-type n-channel MOS transistor, and the depletion-type n-channel MOS transistor generates a first constant current. A current-mirror circuit is connected to the depletion-type n-channel MOS transistor, and mirrors the first constant current. A first enhancement-type n-channel MOS transistor generates a first constant voltage which depends on the first constant current, when receiving the first constant current mirrored by the current-mirror circuit and being activated. A first resistance element is connected between the first enhancement-type n-channel MOS transistor and ground. A second enhancement-type n-channel MOS transistor is connected to the first enhancement-type n-channel MOS transistor and the first resistance element, and controls generation of a second constant current in the first resistance element in accordance with activation of the first enhancement-type n-channel MOS transistor. A second resistance element is connected between a power-supply line and the second enhancement-type n-channel MOS transistor, and generates a second constant voltage which depends on the second constant current.