The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Aug. 11, 1997
Applicant:
Inventor:
Tadashi Hirao, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257565 ; 257588 ; 257592 ; 257755 ; 257506 ;
Abstract
A semiconductor integrated circuit device includes a bipolar transistor having a semiconductor layer which will have a collector region, a base region provided at the surface of the semiconductor layer, and an emitter region provided at the surface of the base region. The device includes a first silicon film for connecting an external base layer with a base electrode of the transistor, and a first silicide film produced on the surface of the first silicon film, and a second silicon film for connecting an emitter layer with an emitter electrode of the transistor and a second silicide film produced on the surface of the second silicon film.