The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Jan. 26, 1999
Applicant:
Inventors:
Thomas C Holloway, Murphy, TX (US);
Douglas T Grider, McKinney, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438724 ; 438744 ;
Abstract
A gate electrode of a MOS transistor wherein gate oxide 12 is placed over substrate 10. Boron-doped polysilicon gate electrode 14 is placed over gate oxide 12. Optionally, drain extender implants may be added to substrate 10. Low-temperature-deposited nitride layer 18 is placed over gate electrode 14 and gate oxide 12. The structure then undergoes a sidewall spacer etch to form sidewall spacers 20.