The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Mar. 26, 1998
Applicant:
Inventors:
Nobuyuki Nishikawa, Kanagawa, JP;
Toshiya Suzuki, Kanagawa, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438685 ; 438685 ; 438398 ; 438762 ; 4271263 ;
Abstract
The method of the production of a semiconductor device including the step of forming the dielectric film on or above the semiconductor substrate, placing the semiconductor substrate and the dielectric film in the atmosphere of reduced pressure and introducing into the atmosphere of reduced pressure the reaction gas for the deposition of metal or metal nitride and the oxidizing gas thereby forming the oxygen-containing conductor film formed of metal or metal nitride on the dielectric film.