The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Oct. 21, 1997
Applicant:
Inventor:
Larry Yu Wang, San Jose, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438424 ; 438426 ; 438435 ; 438911 ;
Abstract
The quality of an ultra thin gate oxide film, particularly at the edges of a shallow trench isolation structure, is improved employing a double sacrificial oxide technique. After trench filling and planarization, the pad oxide layer thickness is increased during trench fill densification in an oxidizing atmosphere. The pad oxide is then removed exposing the substrate surface and trench edges. A second sacrificial oxide is formed consuming part of the substrate surface. The second sacrificial oxide is then removed along with defects in the substrate surface prior to gate oxide and gate electrode formation.