The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2000

Filed:

Sep. 26, 1996
Applicant:
Inventors:

Hiroyasu Sumino, Tokyo, JP;

Akihiro Horiguchi, Kanagawa-ken, JP;

Mitsuo Kasori, Kanagawa-ken, JP;

Fumio Ueno, Tokyo, JP;

Assignee:

Kabushiki Kaisha Toshiba, Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B / ;
U.S. Cl.
CPC ...
428336 ; 501 97 ; 228122 ; 428469 ; 428472 ; 428697 ; 428698 ; 428699 ; 428701 ; 428702 ;
Abstract

Disclosed are a high thermal conductivity silicon nitride circuit substrate which comprises a silicon nitride ceramic plate having a thermal conductivity at 25.degree. C. of 60 W/m.multidot.K or more and a metal circuit plate joined to the silicon nitride ceramic plate through an intermediate layer containing oxygen and at least one element selected from the group consisting of titanium, zirconium, hafnium, niobium and aluminum, and a semiconductor device using the same.


Find Patent Forward Citations

Sumino, Hiroyasu. (2000). High thermal conductivity silicon nitride circuit substrate and (U.S. Patent No. 6086990). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6086990

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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