The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 11, 2000
Filed:
Apr. 22, 1999
Wen Hong Liu, San Jose, CA (US);
Gang Peng, Milpitas, CA (US);
Tsutomu Yamashita, San Jose, CA (US);
Tu Chen, Monte Sereno, CA (US);
Komag, Incorporated, San Jose, CA (US);
Abstract
Sputtering method for producing amorphous hydrogenated carbon thin films with high sp.sup.3 content. By sputtering the carbon with a pulsed DC power supply having high voltage peaks, a carbon film with remarkably high sp.sup.3 bonding fraction can be obtained. Previously, carbon films with a very high sp.sup.3 fraction film with content as high (e.g. as 80%) could only be produced by methods such as filtered cathodic arc deposition or chemical vapor deposition methods (CVD) such as plasma-enhanced chemical vapor deposition (PE-CVD) and ion-beam deposition operating at some narrowly defined range of deposition conditions. It is very advantageous to use sputtering to create a high sp.sup.3 content film, since sputtering is more manufacturable and has higher productivity compared to CVD or ion-beam deposition methods. The resultant carbon film has excellent durability and corrosion resistance capability down to very low thickness. Also compared to PE-CVD and ion-beam deposition, the new sputtering process produce much less particles and the process can be run on a manufacturing tool for much longer time, thereby increasing the productivity of the machine, and providing disks with higher quality.