The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2000

Filed:

Oct. 24, 1997
Applicant:
Inventors:

Chung J Lee, Fremont, CA (US);

Hui Wang, Fremont, CA (US);

Giovanni Antonio Foggiato, Morgan Hill, CA (US);

Assignee:

Quester Technology, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118724 ; 118715 ; 118726 ; 1187 / ; 1187 / ;
Abstract

The described deposition systems are designed to accommodate new precursors and chemical processes used for transport polymerization and chemical vapor deposition. The systems consist primarily of a reactor, a liquid injector or gas mass flow controller, a cracker and a deposition chamber under sub-atmospheres pressure. The cracker utilizes one or more types of energy, including heat, photons, and plasmas. This invention is especially useful for preparing F-PPX (fluorinated poly(para-xylylenes) and other fluorinated polymer thin films for intermetal dielectric (IMD) and interlevel dielectric (ILD) applications in the manufacture of integrated circuits with features <0.25 .mu.m in size.


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