The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Jun. 04, 1999
Tadashi Onodera, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
In a bandgap reference voltage generating circuit having first, second and third unitary circuits connected in parallel between a power supply voltage and a ground, there is added a fourth unitary circuit including an n-channel FET turned on in response to a bias voltage applied to a gate of the n-channel FET. The second unitary circuit is connected to the fourth unitary circuit through a capacitor having one end connected to a drain of the n-channel FET. When the bias voltage is applied to turn on the n-channel FET of the fourth unitary circuit, since the potential of the one end of the capacitor is dropped, a gate potential of n-channel FETs included in the first and second unitary circuits and operating in a weak inversion condition quickly becomes definite, so that a reference voltage can be generated quickly.