The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2000

Filed:

May. 28, 1997
Applicant:
Inventors:

Natale Aiello, Catania, IT;

Vito Graziano, Palermo, IT;

Atanasio La Barbera, Palermo, IT;

Stefano Sueri, Catania, IT;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257553 ; 257502 ; 257566 ; 257587 ;
Abstract

An integrated device comprises a high-voltage transistor and a low-voltage transistor in an emitter-switching configuration integrated in a chip (400) of semiconductor material comprising a buried P-type region (120) and a corresponding P-type contact region (405) which delimit a portion of semiconductor material within which the low-voltage transistor is formed. The contact region (405) has a network structure such as to divide this portion of semiconductor material into a plurality of cells (410) within each of which there is an elemental P-type base region (425) and an elemental N-type emitter region (430) of the low-voltage transistor. The elemental regions (425) and (430) of the various cells (410) are electrically connected to one another by means of surface metal contacts.


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