The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2000

Filed:

May. 24, 1995
Applicant:
Inventors:

Kurt E Petersen, San Jose, CA (US);

Nadim Maluf, Mountain View, CA (US);

Wendell McCulley, San Jose, CA (US);

John Logan, Danville, CA (US);

Erno Klaasen, Sunnyvale, CA (US);

Jan M Noworolski, San Francisco, CA (US);

Assignee:

Lucas NovaSensor, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257254 ; 257415 ; 257417 ; 257622 ; 257628 ; 7351432 ; 7351421 ; 73718 ; 73DI / ; 438 50 ; 438 52 ; 216-8 ; 216 17 ; 216 39 ; 200329 ;
Abstract

In one aspect, the invention provides semiconductor sensor which includes a first single crystal silicon wafer layer. A single crystal silicon structure is formed in the first wafer layer. The structure includes two oppositely disposed substantially vertical major surfaces and two oppositely disposed generally horizontal minor surfaces. The aspect ratio of major surface to minor surface is at least 5:1. A carrier which includes a recessed region is secured to the first wafer layer such that said structure is suspended opposite the recessed region.


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