The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Jan. 28, 1998
Sony Corporation, Tokyo, JP;
Abstract
Disclosed is a semiconductor light emitting device improved in static characteristics such as operational current and prolonged in service life. On an n-type GaAs substrate are sequentially grown an n-type GaAs buffer layer having a thickness of 0.3 .mu.m; an n-type AlGaInP cladding layer having a thickness of 1 .mu.m; and an active layer having a MQW structure of GaInP/AlGaInP. Then, a carrier diffusion suppressing layer having a thickness of 50 nm is grown on the active layer at a reduced V/III ratio. On the carrier diffusion suppressing layer are sequentially grown a p-type AlGaInP cladding layer having a thickness of 1 .mu.m; a p-type GaInP layer having a thickness of 0.1 .mu.m; and a p-type GaAs current cap layer having a thickness of 0.3 .mu.m. Then, the p-type AlGaInP cladding layer, p-type GaInP layer, and p-type GaAs current cap layer are selectively etched by typically photolithography, to form a mesa structure, and an n-type GaAs current cap layer is grown to be laminated on both sides of the mesa structure, to form a semiconductor light emitting device.