The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
May. 15, 1998
Hirohisa Yano, Kyoto, JP;
Jun Ichihara, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A GaN-based compound semiconductor layer is formed on a substrate. An etch mask of a Ti film is formed on a surface of said gallium-nitride based compound semiconductor. The gallium-nitride based compound semiconductor is selectively etched through an opening of said etch mask. With this method, even where the semiconductor is difficult to etch, it is possible to efficiently etch the semiconductor vertically relative to a surface thereof by once forming a mask without troubles such as stripping-off of a mask. If the etch mask uses a metal film easy to oxidize to perform etching on the semiconductor layer while supplying an oxidizing source, the selective etch ratio can be further increased, enabling etching by a thin etch film.