The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Oct. 20, 1998
Kazumi Sugai, Tokyo, JP;
NEC Corporation, , JP;
Abstract
In a method of manufacturing semiconductor device, an aluminum film and a barrier metal film are formed on a semiconductor substrate and then an interlayer insulation film 15 is formed over the aluminum film and the barrier metal film. Then a PVD-Al film is formed over the entire upper surface of the interlayer insulation film by PVD, whereupon the PVD-Al film the interlayer insulation film are etched to open via holes, exposing part of the upper surface of the barrier metal film. Subsequently, via plugs are formed by filling metal, which includes aluminum, in the via holes by selective CVD with masking by a native oxide film formed on the upper surface of the PVD-Al film whereupon the native oxide film is removed by etching. Then a CVD-Al is formed over the entire upper surface of the PVD-Al film and the via plugs by CVD.