The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Apr. 16, 1998
Yasumasa Kashima, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
The method for forming the compound semiconductor device includes the step of forming a buffer layer so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the method for forming the compound semiconductor device can avoid a shape change and a thickness change because of defect of the periodic corrugation. Further, the compound semiconductor device includes a buffer layer formed so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the compound semiconductor device can get superior characteristics of the compound semiconductor device.