The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2000
Filed:
Jun. 13, 1997
John L Nistler, Martindale, TX (US);
Derick J Wristers, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method of adjusting drive currents on a semiconductor device having transistors of various densities is disclosed. Consistent with the invention, off-state currents and drive currents associated with non-dense transistors on a first semiconductor device formed by a fabrication process are determined. Off-state currents associated with dense transistors on the first semiconductor device are also determined. Using the determined off-state and drive currents associated with the non-dense transistors and the off-state currents associated with the dense transistors on the first semiconductor device, drive currents associated with the dense transistors on the first semiconductor device are estimated. One or more parameters of the fabrication process are then adjusted based on the estimated drive currents of the dense transistors on the first semiconductor device in order to calibrate drive currents of dense transistors with drive currents of non-dense transistors on semiconductor devices formed using the fabrication process. The drive currents of the dense and non-dense transistors may, for example, be matched to within about 3 microamps.