The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2000

Filed:

Jan. 07, 1999
Applicant:
Inventors:

Yoshinobu Umetani, Yamatotakada, JP;

Hideki Ohnishi, Chiba, JP;

Yukikazu Kamei, Ichihara, JP;

Kiyoshi Toizumi, Yamatokoriyama, JP;

Kouichi Yamauchi, Yamatokoriyama, JP;

Fumio Shimazu, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03G / ;
U.S. Cl.
CPC ...
399303 ; 399313 ;
Abstract

The object of the invention is to provide a transfer apparatus including a transfer drum which carries a transfer material by electrostatic attraction with reliability, and can prevent the transfer nonuniformity of the image. The transfer drum is so formed that on the surface of a dielectric layer made of cylinder-shaped aluminium, are formed side by side two semiconductor layers each formed by a foamed elastic member, and on the surface of the semiconductor layers are stacked a conductive layer formed by PVDF. The first semiconductor layer is formed under the transfer region within the surface of the transfer drum, and the diameter of cell is set to be in a range of over 0 .mu.m to 50 .mu.m. Also, the second semiconductor layer is formed under the non-transfer region within the surface of the transfer drum, and the diameter of cell is set to a size of 500 .mu.m or more.


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