The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Feb. 26, 1998
Chang-Oh Jeong, Incheon-si, KR;
Yang-Sun Kim, Kyungki-do, KR;
Myung-Koo Hur, Kyungki-do, KR;
Young-Jae Tak, Kyungki-do, KR;
Mun-Pyo Hong, Kyungki-do, KR;
Chi-Woo Kim, Seoul, KR;
Jueng-Gil Lee, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
Since Mo or MoW layer can be deposited so as to give low stress to the substrate by adjusting the deposition pressure, a single Mo or MoW layer can be used as a wiring by itself of large scale and high resolution liquid crystal. The Mo or MoW layer has the low resistivity of less than 15 .mu..OMEGA.cm and is etched to have a smooth taper angle using an Al etchant with Al or Al alloy. Therefore, it is possible to reduce the number of photolithography processes and to prevent a battery effect and generation of a hillock.