The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Jan. 07, 1999
Takeru Matsuoka, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A gate insulating film and gate electrodes are formed on a substrate containing N-type impurities such as P or As. Under the gate insulating film is a gate region on both sides of which are a first and a second source drain region. The gate region is furnished in its central part with a high-concentration channel injection region containing N-type impurities at a concentration higher than that of the substrate. Between the high-concentration channel injection region on the one hand and the first and the second source drain region and on the other hand, there are formed a first and a second low-concentration channel injection region and having substantially the same impurity concentration as that of the substrate.