The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2000

Filed:

Nov. 12, 1998
Applicant:
Inventor:

Koji Urabe, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438659 ; 438658 ;
Abstract

A titanium nitride film is formed on a silicon substrate having a contact hole formed therein by chemical vapor deposition and silicon ions are injected. Therefore, it is possible to reduce the film stress of the titanium nitride film, caused by the chemical vapor deposition, to the semiconductor device.


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