The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2000
Filed:
Mar. 26, 1996
Applicant:
Inventors:
Helena Gleskova, Princeton, NJ (US);
Dashen Shen, Madison, AL (US);
Sigurd Richard Wagner, Princeton, NJ (US);
Assignee:
The Trustees of Princeton University, Princeton, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438151 ; 438152 ; 438160 ; 438586 ; 430126 ;
Abstract
Amorphous silicon thin-film transistors on glass foil are made using exclusively electrophotographic printing for pattern formation, contact hole opening, and device isolation. Toner etch masks are applied by feeding the glass substrate through a laser printer or photocopier, or from laser-printed patterns on transfer paper. This all-printed patterning is a low-cost, large-area circuit processing technology, suitable for producing backplanes for active matrix liquid crystal displays.