The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Jun. 07, 1995
Ikuo Ogoh, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
Disclosed herein are a structure of and a method of manufacturing a semiconductor device which can relatively readily form a high-concentration impurity layer or a three-layer LDD structure for reducing contact resistance in a source/drain region in high accuracy. In the method of manufacturing a semiconductor device, deposition of an oxide insulating film and anisotropic etching thereof are carried out a plurality of times, and the anisotropic etching is carried out in a state covering one side wall of a gate electrode part with a mask at least once in the plurality of times thereby forming side wall spacers having different widths on both side walls of the gate electrode part respectively, while the side wall spacer provided on one of the side walls is employed as a mask to form a high-concentration n-type impurity layer to be inside the source/drain region on a semiconductor substrate surface corresponding to this side.