The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Mar. 12, 1999
Applicant:
Inventors:
Matthew J Dejneka, Corning, NY (US);
Rostislav Khrapko, Moscow, RU;
Assignee:
Corning Inc., Corning, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C / ; C03C / ; C03C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
501 37 ; 501 42 ; 501 43 ; 501 54 ; 501 57 ; 501 68 ; 501 73 ; 359341 ; 359343 ;
Abstract
These glasses incorporate a combination of F and Al.sub.2 O.sub.3 to achieve even wider fluorescence and improved gain flatness. In addition, SPCVD incorporates large amounts of N into low-loss fiber whose high charge has an impact on rare earth behavior. The Surface Plasma Chemical Vapor Deposition (SPCVD) produces fiber preforms with high levels of F, Al.sub.2 O.sub.3, and N. These heavily fluorinated glasses provide much broader Er.sup.3+ emission than Type I or Type II silica for enhanced multichannel amplifiers. SPCVD successfully fluorinates silica with losses below 5 dB/km and increased Er.sup.3+ emission width.