The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Mar. 11, 1998
Applicant:
Inventor:
Mark A DeTar, Round Rock, TX (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438778 ; 438787 ; 438791 ;
Abstract
Deuterated compounds are used to form passivation (20) and other insulating layers to reduce the hydrogen content within those films. Semiconductor source gases, nitride source gases, and dopant gases can be obtained in deuterated form. Process steps for forming and etching are substantially the same as those used to form and etch conventional insulating layer. A sintering step can be performed using deuterated gas or omitted altogether.
Quick Actions:
DeTar, Mark. (2000). Method of forming passivation layers using deuterium containing reaction (U.S. Patent No. 6077791). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6077791
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile