The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Dec. 04, 1998
Weng-Yi Chen, Chupei, TW;
Kuen-Chu Chen, Hsinchu Hsien, TW;
United Integrated Circuit Corp., Hsinchu, TW;
Abstract
A method for fabricating a field effect transistor (FET) with a T-like gate structure includes forming a silicon nitride layer over a silicon substrate and patterning it to form an opening that exposes the substrate. A dielectric layer is formed on a lower portion of each side-wall of the opening so that the opening has a T-like free space. A doped polysilicon layer fills the T-like free space through only one deposition. After performing a planarization on the doped polysilicon layer, a titanium metal layer is formed over the substrate. A self-aligned titanium silicide is formed over the substrate other than the dielectric layer surface through a rapid thermal process (RTP). A selective etching process is performed to remove the remaining titanium metal layer. After removing the dielectric layer a RTP is performed again to reform the crystal structure of the titanium silicide layer so as to reduce its resistance. A T-like gate structure is formed.