The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Jul. 02, 1998
Ted Johansson, Djursholm, SE;
Larry Clifford Leighton, Santa Cruz, CA (US);
Telefonaktiebolaget LM Ericsson, Stockholm, SE;
Abstract
The present invention relates to a vertical bipolar power transistor primarily intended for radio frequency applications and to a method for manufacturing the bipolar power transistor. The power transistor comprises a substrate (13), a collector layer (15) of a first conductivity type on the substrate, a base (19) of a second conductivity type electrically connected to the collector layer, an emitter (21) of the first conductivity type electrically connected to the base, the base and the emitter each being electrically connected to a metallic interconnecting layer (31,33), the interconnecting layers (31,33) being at least in parts separated from the collector layer (15) by an insulation oxide (17). According to the invention the power transistor substantially comprises a field shield (25) electrically connected to the emitter, and located between the metallic interconnecting layer of the base and the insulation oxide.