The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Apr. 05, 1999
Applicant:
Inventor:
Hsin-Kun Chu, Hsinchu Hsien, TW;
Assignee:
United Integrated Circuits Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ;
Abstract
A method of fabricating a DRAM capacitor. After forming a node contact opening in a dielectric layer on the substrate, a conductive layer having an annulus hollow is formed. A recess is formed on the conductive layer and a spacer is formed on the sidewall of the spacer, after which the annulus hollow is filled with an oxide layer. A photoresist layer for defining the capacitor region is formed. The etching stop layer, the oxide layer, and the spacer are removed to form the bottom electrode. Then, the dielectric layer and the upper electrode are formed in sequence.