The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2000
Filed:
Dec. 19, 1996
Hyun Sang Hwang, Daejeon-si, KR;
Jae Gyung Ahn, Chungcheongbuk-do, KR;
LG Semicon Co., Ltd., Chungcheongbuk-Do, KR;
Abstract
A method of fabricating a semiconductor device includes the steps of preparing a semiconductor substrate having a first region and a second region, forming a first gate electrode and a second gate electrode over the semiconductor substrate at the first and second regions, respectively, implanting a first impurity ion into the substrate of the first region using the first gate electrode as a mask, implanting a second impurity ion into the substrate of the second region using the second gate electrode as a mask, forming sidewall spacers at both sides of each of the first and second gate electrodes, and implanting the second impurity ion into the first and second regions using the first and second gate electrodes and the sidewall spacers as masks.