The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Jan. 17, 1996
Takemasa Tamanuki, Tokyo, JP;
Hiroyuki Yamazaki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The semiconductor laser disclosed includes a first conductivity type buffer layer, an active layer and a second conductivity type cladding layer which are sequentially positioned on a first conductivity type semiconductor substrate. The active layer has a laser gain region to which an electric current is injected. The laser gain region having a width varying linearly along a resonating direction is disposed between a high reflection film provided on a facet of a wide side of the laser gain region of the active layer and a low reflection film provided on a facet of a narrow side of the laser gain region of the active layer. The facet of the narrow side is for outputting oscillation beams of a high order mode. This provides a high electrical-to-optical conversion efficiency, and enables the outputting of a large output from a narrow light emission region.