The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Feb. 25, 1998
Yoh Takano, Gifu-ken, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A flash EEPROM has a memory cell array of memory cells. Each memory cell includes a floating gate electrode, a source, a drain and a control gate electrode. A data value is stored in a memory cell by storing a charge in its floating gate electrode. A control circuit controls voltages applied to the control gate electrode, the source and the drain of the memory cells. A charge which is greater than a charge amount corresponding to a desired data value is stored in the floating gate electrode of a memory cell. In the write mode, charge is drained from the floating gate electrode. A write determining circuit checks the amount of charge remaining in the floating gate electrode after charge has been drained from it. The write determining circuit disables the write operation when the amount of charge remaining in the floating gate electrode reaches the charge amount corresponding to the desired data value.