The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2000

Filed:

Jul. 29, 1998
Applicant:
Inventors:

Bruce Lee Morton, Austin, TX (US);

Michel Bron, Lausanne, CH;

Alexis Marquot, Lanovaz, FR;

Graham Stout, Glasgow, GB;

Assignee:

Motorola, Inc, Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ; G11C / ;
U.S. Cl.
CPC ...
36518522 ; 36518529 ; 365218 ;
Abstract

A method for writing to a bit of a non-volatile memory (50) by alternately applying programming and erase voltages to a control gate wordline of a memory cell. A write includes programming and erasing bits (30, 31, . . . , 32, 33) in the memory array (56). Upon completion of the write operation a verify erase (VE) indication and a verify program (VP) indication are provided to a memory controller (58), which then determines if multiple cycles are necessary. The configuration of the memory cell allows isolation of each bit in the memory array to avoid effects of writes to neighbor bits. According to one embodiment, a three transistor EEPROM is written by providing a high voltage to the drain select of the selected wordline, while providing a low voltage to the drain select of other wordlines. Programming and erase voltages are applied to the control gate wordline of the selected wordline in cycles until the write is complete.


Find Patent Forward Citations

Loading…