The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2000
Filed:
Mar. 13, 1998
Applicant:
Inventors:
Masami Nagaoka, Ebina, JP;
Yoshiko Ikeda, Kawasaki, JP;
Toshiki Seshita, Fujisawa, JP;
Atsushi Kameyama, Tokyo, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H03G / ;
U.S. Cl.
CPC ...
330284 ; 330145 ; 330277 ; 330302 ;
Abstract
The invention provides a high frequency amplifier in which a variable attenuator consisting of a bypass FET, which has a drain connected to a first-stage amplifying FET via a resistor, and a source grounded via a capacitor, is located on a main signal line leading to the gate of the amplifying FET, in order to control the gate potential of a bypass FET using a gain control voltage source, thereby varying the gain of the amplifier.