Split-gate non-volatile semiconductor memory device

Abstract

A non-volatile semiconductor memory device includes a substrate and a continuously formed drain diffusion layer and a continuously formed source diffusion layer which are alternately arranged within the substrate. Floating gates are disposed via a tunnel insulating film on the substrate so that they are adjacent to the drain diffusion layer. The floating gates are opposed to each other with the drain diffusion layer therebetween, and spaced away from the source diffusion layer. A control gate extends in a direction orthogonal with a direction in which the source and drain diffusion layers extend, the control gate being formed on the floating gates and the substrate via an insulating film. A select channel is provided between the floating gate closest to the source diffusion layer and the source diffusion layer. A thick insulating film is provided between the drain diffusion layer and the control gate between the floating gates which are opposed to each other with the drain diffusion layer therebetween.